Anoveltheoreticalmodelofthermaldiffusionhasbeenestablishedtostudythermalinteractionbetweentwoneighboringdiodsinsemiconductorlaserarrays.Themaincauseoftheocurrenceofthethermalinteractionbetweentwoneighboringdiodesinarraydevicesistheheatconductionthroughheatsink.Weholdthatasthedevicesmusyhaveheatsinktodiffuseheat,thiskindofinteractioninthearraywouldalwaysexist.However,whenthepitchbetweentwoneighboringdiodesinthearrayisreasonablydefined,thistroublesomethermalinteractioncanbesimplyreducedbyusingourmodel.Basedontheinpidualdiodeswithleakywaveguidestructure,weexperimentallysucceededinfabricating2D4×4arrays.Thethermalinteractionbetweenupperandlowerdiodesinthe2Darrayisalsoconsideredaswellasthefunctionoftheheatsink.Themeasuredresultsshowthatthepulsepeakoutputpowerofthe2D4×4arrayishighupto11W.
