摘要
Anoveltheoreticalmodelofthermaldiffusionhasbeenestablishedtostudythermalinteractionbetweentwoneighboringdiodsinsemiconductorlaserarrays.Themaincauseoftheocurrenceofthethermalinteractionbetweentwoneighboringdiodesinarraydevicesistheheatconductionthroughheatsink.Weholdthatasthedevicesmusyhaveheatsinktodiffuseheat,thiskindofinteractioninthearraywouldalwaysexist.However,whenthepitchbetweentwoneighboringdiodesinthearrayisreasonablydefined,thistroublesomethermalinteractioncanbesimplyreducedbyusingourmodel.Basedontheindividualdiodeswithleakywaveguidestructure,weexperimentallysucceededinfabricating2D4×4arrays.Thethermalinteractionbetweenupperandlowerdiodesinthe2Darrayisalsoconsideredaswellasthefunctionoftheheatsink.Themeasuredresultsshowthatthepulsepeakoutputpowerofthe2D4×4arrayishighupto11W.
出版日期
2000年02月12日（中国期刊网平台首次上网日期，不代表论文的发表时间）
