简介:Targetplasmas,onwhichtheformationoftheelectrostaticpotentialsandtheim-provementoftheconfinementarestudied,areproducedwithICRFintheGAMMA10tandemmirror.Theiontemperatureofmorethan10keVhasbeenachievedinrelativelylowdensityplasmas.WhenthestrongICRFheatingisapplied,itisobservedthatthehighfrequencyandthelowfrequencyfluctuationsareexcitedandsuppresstheincreaseoftheplasmaparameters.Recently,anewhighpowergyrotronsystemhasbeenconstructedandtheECRHpowerinplugextendsupto370kW.Theimprovementoftheconfinementduetotheformationofthepotentialintheaxialdirectionandthestrongradialelectricfieldshearhasbeenobserved.
简介:Anewrectangularpulsetriggergeneratorhasbeendevelopedwhichcangeneratetwo10kVpulseswitharisetimelessthan1ns,ajitterof0.2nsandawidthofabout10nsand40ns,respectively.Thisgeneratorusestwopolymer-foilswitchesand25ohmBlumleintransmissionlinescomposedoftwo-parallelstandardcoaxialcablesdischargingintotwo50ohmoutputcables.Thepulsewidthandthedelaybetweentwopulsescanbeadjustedbychangingthelengthofthecables.
简介:利用同步辐射(BSRF)漫散射站四圆衍射仪,对SiC体单晶的结构进行了判定以及对利用常压化学气相沉积(APCVD)生长的3C-SiC/Si(001)中的孪晶及含量进行了分析。六方{10-15}极图证明了该SiC单晶为6H(H为Hexagonal的缩写)结构。对3C-SiC外延薄膜,Φ扫描证明了3C-SiC外延生长于Si衬底上,外延取向关系为:(001)3C-SiC//(001)Si,[111]3C-SiC//[111]Si。3C-SiC的{111}极图在x=15.8°出现了新的衍射,采用六方{10-10}极图以及基体倒格点111、孪晶倒格点002的Mapping分析了x=15.8°处产生的衍射为3C-SiC孪晶所致,并利用ω扫描估算了孪晶的含量约为1%。