简介：战略分析指出，手机市场仍然是GaAs器件工业的主要驱动力，2003年北美的公司是其主导者。

简介：Athree-dimensionalmodelofGaAs/A1GaAsquantumdoubleringsinthelateralstaticelectricfieldisinvestigatedtheoretically.Theeigenvalueproblemwiththeeffective-massapproximationissolvedbymeansofthefinite-elementmethod.Theenergylevelsandwavefunctionsofquantum-confinedelectronsandheavyholesareobtainedandshowanagreementwithourprevioustheoreticalandexperimentalstudies.ItisshownintheapproximationofneglectingtheCoulombattractionbetweentheelectronandheavyholethatarelativelylargeStarkshiftofexcitonemissionof4meVisattainablewithanappliedelectricfieldof0.7kV/cm.

简介：关于全球半绝缘(SI)GaAs晶片市场“SIGaAs衬底市场：2003～2008”预测：该市场到2008年将增长54％。2002～2003年间的增长率为43％。日本和北美仍然是体晶片的主要生产者，2003年占整个市场的43％，该地区2003年SIGaAs晶片市场(外卖和自用)增加33％。亚太地区的市场增长最快，但主要以代工模式运营以便为GaAs半导体工业的发展打下基础。

简介：ThereolutioncharacteristicofGaAs/GaAlAstrransmissionphotocathodeisanimportantparameterinthirdgenerationintensifiers.ThemodulationtransferfunctionofGaAs/GaAlAstransmissionphotocathodeisderivedfromasimpletwo-dimensionaldiffusionequation.Thetheoreticalresolutioncharacteristicofa2μmthickGaAs/GaAlAstransmissionphotocathodeiscalculated.TherelationshipbetweenresolutionandparametersinGaAs/GaAlAstransmissionphotocathodeisdiscussed.AconclusionisshownthatonecandesigntheGaAs/GaAlAstransmissionphotocathodeformaximumquantumefficiency,sincethesacrificeintheresolutiondoesn'tlimitsystemperformances.

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简介：InGaAsP/GaAsSCHSQWlaershavebeenpreparedbyLPMOCVD.Thedependenceofthresholdcurrentdensityoncavitylengthwasexplained.Laserdiodesarecharacterizedbytheoutputpowerof1W20W,thresholdcurrentdensity(Jth)of330A/cm^2to450A/cm^2andexternaldifferentialquantumefficiency(ηd)of35%to75%,andthesecharacteristicsareingoodagreementwiththedesignedrequirement.

简介：WhenweuseMOCVDtechnique,anexcellentCdTeepi-layerwasgrownonGaAssubstratesandtheCdTe/GaAshybridsubstratessuitableforgrowingHg1-xCdxTe（CMT）wereobtained.ThexvalueinCMTisbetween0.2and0.8.TheelectricalpropertiesofCMTdependuponthethicknessofCdTeepi-layers.TheCdTe/GaAsinterfacewasexaminedbybothscanningelectronmicroscope（SEM）andelectronaugerspectra（EAS）.TheinfluenceofdefectsobservedatinterfaceonelectricalandopticalpropertiesofCMTfihnswasdis-cussed.

简介：Weinvestigatethenonlinearresponseofterahertz(THz)metamaterialperfectabsorbersconsistingofelectricsplitringresonatorsonGaAsintegratedwithapolyimidespacerandgoldgroundplane.Theseperfectabsorbersonbulksemi-insulatingGaAsarecharacterizedusinghigh-fieldTHztime-domainspectroscopy.Theresonancefrequencyredshifts20GHzandtheabsorbanceisreducedby30%astheincidentpeakfieldisincreasedfrom30to300kV/cm.ThenonlinearresponsearisesfromTHzfielddriveninterbandtransitionsandintervalleyscatteringintheGaAs.ToeliminatetheFresnellossesfromtheGaAssubstrate,wedesignandfabricateaflexiblemetamaterialsaturableperfectabsorber.Theabilitytocreatenonlinearabsorbersenablesappealingapplicationssuchasopticallimitingandself-focusing.

简介：据参加微波技术与工艺研讨会（MTT-S）的一个专家讨论小组，RFCMOS可能还未迎来黄金时段，至少是在手机功率放大器领域，而砷化镓（GaAs）将继续在该领域处于主导地位。诺基亚的RF工程与技术经理FazalAli估计．2004年手机出货量约为6．645亿部，每部电话中有两或三个放大器，总计接近20亿个。他问这些功率放大器（PA）中有多少是CMOS，显然暗示答案是“不太多”。

简介：利用4.5MeV的氪离子（Kr^17＋）辐照（100）晶向本征未掺杂和高掺锌（P型）、（100）和（110）混合晶向的高掺硅（N型）砷化镓（GaAs）半导体材料,辐照注量为1×10^12～3×10^14cm^-2,测试辐照后材料的拉曼光谱。随着辐照注量增大,材料的纵向光学（longitudinaloptical,LO）声子峰向低频方向移动,出现了明显的非对称展宽,并且N型样品辐照后,晶体结构损伤要大于P型与本征未掺杂样品。3种类型样品的LO峰频移随辐照损伤的变化趋势一致,研究表明,掺杂元素不影响材料本身的晶体结构,可能是因为混合晶向的生长方式导致辐照后N型GaAs结构稳定性变差。

简介：<正>现场工作标准在对财务报表形成意见之前,审计人员必须能确认它们的恰当性。现场工作标准为审计人员提供了判断财务报表质量的依据。以下分别简述这三条现场工作标准并进行全面的讨论。

简介：Zinchasbeendiffusedinton-typeInxGa1-xAs,InPandGaAsinclosedam-poules,andtheexperimentaldataforInxGa1-xAsrarelyreportedpreviouslyhavebeenob-tained,TheoreticallythelinearrelationsipbetweenlogarithmicdiffusioncoefficientlnDandthecompositionxhasbeendemonstrated,whichisingoodagreementwiththeexperimentalresults.ThecalculateddiffusionjunctiondepthforInGaAsbasedonthediffusionmodelinwhichD^∝c^2isassumedalsoagreeswellwiththatoftheexperment,Finallytheoveralldiffusiontimeinamultiayerheterostructurewasapproximatedast=(∑√-ti）^2.

简介：WefabricatephotoniccrystalslabmicrocavitiesembeddedwithGaAsquantumdotsbyelectronbeamlithographyanddropletepitaxy.ThePurcelleffectofexcitonemissionofthequantumdotsisconfirmedbythemicrophotoluminescencemeasurement.Theresonancewavelengths,widths,andpolarizationareconsistentwithnumericalsimulationresults.

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简介：TheeffectsofgrowthtimeonthestructureandmorphologyofcubicGaNnucleationlayersonGaAs(001)substratesbymetalorganicchemicalvapordeposition(MOCVD)havebeeninvestigatedusingasynchrotronX-raydiffraction(XRD).TheXRDresultsshowthattheGaN111reflectionsat54.75°inχareameasurablecomponent,howeverthe002reflectionsparalleltoGaAs(001)surfacearenotdetected.TheXRDΦscansandpolefiguresgiveaconvincingproofthattheGaNnucleationlatyersshowexactlythecubicsymmetricalstructure.Thecoherencelengthsalongtheclose-packed<111>directionestuimatedfromthe111peakarenanometerorderofmagnitude,Theoptimalphotoluminescence(PL)spectrumwasobtainedfromthecubicGaNepilayerdepositedonthenucleationlayerfor60sec.

简介：AseriesofGaAs/AlAsmultiple-quantumwellsdopedwithBeisgrownbymolecularbeamepitaxy.Thephotoluminescencespectraaremeasuredat4,20,40,80,120,and200K,respectively.Therecombinationtransitionemissionofheavy-holeandlight-holefreeexcitonsisclearlyobservedandthetransitionenergiesaremeasuredwithdifferentquantumwellwidths.Inaddition,atheoreticalmodelofexcitonicstatesinthequantumwellsisused,inwhichthesymmetryofthecomponentoftheexcitonwavefunctionrepresentingtherelativemotionisallowedtovarybetweenthetwo-andthreedimensionallimits.Then,withintheeffectivemassandenvelopefunctionapproximation,therecombinationtransitionenergiesoftheheavy-andlight-holeexcitonsinGaAs/AlAsmultiple-quantumwellsarecalculatedeachasafunctionofquantumwellwidthbytheshootingmethodandvariationalprinciplewithtwovariationalparameters.Theresultsshowthattheexcitonsareneither2Dnor3Dlike,butareinbetweenincharacterandthatthetheoreticalcalculationisingoodagreementwiththeexperimentalresults.

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简介：在测试了ＡｌＧａＡｓ／ＧａＡｓＨＢＴ（异质结晶体管）的直流特性和Ｓ参数的基础上，建立了其微波小信号等效电路，准确的等效电路有利于其微波线性应用的分析．应用Ｖｏｌｔｅｒａ级数，计算了ＡｌＧａＡｓ／ＧａＡｓＨＢＴ放大器的三阶互调失真，计算结果和双音测试结果相当一致，该ＨＢＴ良好的线性特性证明了其较好的线性应用前景

简介：High-strainInGaAs/GaAsquantumwells(QWs)aregrownbylow-pressuremetal-organicchemicalvapordeposition(LP-MOCVD).Photoluminescence(PL)atroomtemperatureisappliedforevaluationoftheopticalproperty.Theinfluenceofgrowthtemperature,V/IIIratio,andgrowthrateonPLcharacteristicareinvestigated.ItisfoundthatthegrowthtemperatureandV/IIIratiohavestrongeffectsonthepeakwavelengthandPLintensity.Thefull-widthathalf-maximum(FWHM)ofPLpeakincreaseswithhighergrowthrateofInGaAslayer.TheFWHMofthePLpeaklocatedat1039nmis20.1meV,whichgrowsat600°CwithV/IIIratioof42.7andgrowthrateof0.96mm/h.

简介：由使用0.15mGaAspHEMT(pseudomorphic高度电子活动性晶体管)技术，毫米波浪力量放大器微波的一个图案整体的集成电路(MMIC)是presented.With电路结构上的小心的优化，这个二阶段的电源放大器从33GHz与1dB的变化完成15.5dB的模仿的获得到超过在浸透的30dBm的模仿的产量电源能与最大的电源从3WDC供应被拉的37GHz.A26%.Rigorous的增加的效率(PAE)电磁的s