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简介：Depositionoftwo-dimensional（2D）MoS2materialsonthetaperedfiberallowsvariousphotonicapplicationsincludingsaturableabsorbersandfour-wavemixing.Ethanolcatalyticdeposition（ECD）ofMoS2ontheopticaltaperedfiberwasproposedanddemonstratedinthiswork.Differentfromtheconventionalopticaldrivendepositionusingwaterororganicsolvent,theECDmethodutilizedthehighvolatilityoftheethanolsolvent,whichsignificantlyincreasedthemovementspeedoftheMoS2nanosheetsandthusboostedthedepositionrateandreducedtheminimumpowerthresholdtodrivethedeposition.WebelievetheECDmethodshouldbeabletobeappliedtoothersimilar2Dmaterialssuchasothertypesoftransitionmetalchalcogenides.

简介：Probingtheopticalpropertiesofmolybdenumdisulfide（MoS2）isvitaltoitsapplicationinplasmon-enhancedspectroscopy,catalysts,sensing,andoptoelectronicdevices.Inthispaper,wetheoreticallystudiedtheRamanandfluorescencepropertiesofmonolayerMoS2usingtip-enhancedspectroscopy（TES）.Inthestrong-couplingTESsystem,theRamanandfluorescenceenhancementfactorscanbeturnedtoashighas4.5×108and3.3×103,respectively,byoptimizingthetip–MoS2-filmdistance.OurtheoreticalresultsnotonlyhelptodeeplyunderstandtheTESpropertiesofmonolayerMoS2,butalsoprovidebetterguidanceontheapplicationsofthenoveltwo-dimensionalmaterial.

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简介：摘要：二硫化钼（MoS2）因具有独特的层状结构以及较高的本征催化活性，被认为是可替代贵金属催化剂的材料之一。但是，2H-MoS2表现为半导体特性，其催化性能受到其导电能力及活性位点数目的制约。因此，本文通过Li离子插层化学剥离法对块状2H相MoS2进行改性，制备出了尺寸为几到几十纳米的双相（1T相与2H相）MoS2纳米片，并系统评价了改性后催化剂的析氢活性与稳定性。相比于块体MoS2，MoS2纳米片表现出更佳的析氢（HER）催化性能，在电流密度为10mAcm2下的过电位较前者降低了170 mV，这主要归因于1T-MoS2能够暴露更多的活性位点，且1T-MoS2的存在促使催化剂的导电性增加。

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简介：Amolybdenumdisulfide（MoS2）saturableabsorberwasfabricatedbythermallydecomposingtheammoniumthiomolybdate.ByusingtheMoS2absorber,acompactdiode-pumpedpassivelyQ-switchedTm:GdVO4laserhasbeendemonstrated.AstableQ-switchedlaserwithrepetitionratesfrom25.58to48.09kHzwasachieved.Maximumaverageoutputpowerwas100mWwiththeshortestpulsedurationof0.8μs.Maximumpulseenergyis2.08μJatcenterof1902nm.

简介：Two-dimensionalmaterialsaregeneratinggreatinterestduetotheiruniqueelectricalandopticalproperties.Inparticular,transitionmetaldichalcogenidessuchasmolybdenumdisulfide(MoS2)areattractivematerialsduetotheexistenceofadirectbandgapinthemonolayerlimitthatcanbeusedtoenhancenonlinearopticalphenomena,suchasRamanspectroscopy.Here,wehaveinvestigatedfour-wavemixingprocessesinbulkMoS2usingamultiplexcoherentanti-StokesRamanspectroscopysetup.Theobservedfour-wavemixingsignalhasaresonanceatapproximately680nm,correspondingtotheenergyoftheAexcitonictransitionofMoS2.Thisresonancecanbeattributedtotheincreasedthird-ordernonlinearsusceptibilityatwavelengthsneartheexcitonictransition.ThisphenomenoncouldopenthepathtousingMoS2asasubstrateforenhancingfour-wavemixingprocessessuchascoherentanti-StokesRamanspectroscopy.

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简介：摘要：MoS2由于独特的理化性质作为光催化剂具有优良的催化活性，近年来，诸多学者将MoS2应用于光催化杀菌中，并取得良好的成果。本文对近年来MoS2在光催化杀菌中的研究进展进行了综述，并展望了其研究前景和方向。

简介：Liquid-phase-exfoliationtechnologywasutilizedtopreparelayeredMoS2,WS2,andMoSe2nanosheetsincyclohexylpyrrolidone.Thenonlinearopticalresponseofthesenanosheetsindispersionswasinvestigatedbyobservingspatialself-phasemodulation（SSPM）usinga488nmcontinuouswavelaserbeam.ThediffractionringpatternsofSSPMwerefoundtobedistortedalongtheverticaldirectionrightafterthelasertraversingthenanosheetdispersions.Thenonlinearrefractiveindexofthethreetransitionmetaldichalcogenidesdispersionsn2wasmeasuredtobe10-7cm2W-1,andthethird-ordernonlinearsusceptibilityχ（3）10-9esu.TherelativechangeofeffectivenonlinearrefractiveindexΔn2e∕n（2e）oftheMoS2,WS2,andMoSe2dispersionscanbemodulated0.012–0.240,0.029–0.154,and0.091–0.304,respectively,bychangingtheincidentintensities.Ourexperimentalresultsimplynovelpotentialapplicationoftwo-dimensionaltransitionmetaldichalcogenidesinnonlinearphasemodulationdevices.

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简介：ThisworkismainlytostudytheeffectofheavyionirradiationonthedamageofsinglelayerMoS2.ThenumberoflayersofMoS2preparedbyCVD(chemicalvapordeposition)methodwasdeterminedbyopticalmicroscopyandRamanspectroscopy.ThemonolayerMoS2preparedbyCVDunderhighenergy209BiionirradiationwasanalyzedbyRamananalysisandAFMobservation.AndtheresultsarecomparedandanalyzedbeforeandafterthebeamirradiationofsinglelayerMoS2preparedbymechanicalstrippingmethod.

简介：对磨损的液压泵铜舍金轴套采用Cu／MoS2复合刷镀修复。其刷镀工艺流程为：清洗→检测→保护非镀面→刷镀前处理→刷镀底层（碱性Cu）→刷镀工作层（Cu／MoS2复合镀层）。实践证明：采用铜基MoS2复合刷镀工艺，修复已磨损的液压齿轮泵铜合金轴套，具有较好的耐磨减摩性能。

简介：AtomicallythinMoS2filmshaveattractedsignificantattentionduetoexcellentelectricalandopticalproperties.Thedevelopmentofdeviceapplicationsdemandstheproductionoflarge-areathinfilmwhichisstillanobstacle.Inthisworkwedevelopedafacilemethodtodirectlygrowlarge-areaMoS2thinfilmonSiO2substrateviaambientpressurechemicalvapordepositionmethod.Thecharacterizationsbyspectroscopyandelectronmicroscopyrevealthattheas-grownMoS2filmismainlybilayerandtrilayerwithhighquality.Back-gatefield-effecttransistorbasedonsuchMoS2thinfilmshowscarriermobilityupto3.4cm2V-1s-1andon/offratioof105.Thelarge-areaatomicallythinMoS2preparedinthisworkhasthepotentialforwideoptoelectronicandphotonicdeviceapplications.

简介：Two-dimensional(2D)materialshaveattractedgreatresearchinterestsduetotheiruniqueproperties.2DMoS2,unlikeitsbulkformwhichwidelyusedassolidlubricantandcatalyst,isofbrilliantapplicationprospectinnanoelectronicsandoptoelectrnics.Theelectronicdevicesworkinkindsofradiationenvironment.Toevaluatetheionradiationeffectsonmaterialpropertiesandstabilityofdevice,theswiftheavyionradiationeffectonsingle-layerMoS2wasstudiedinthiswork[1??2].

简介：日本东京大学岩佐义宏教授和理化学研冗所的研冗小组置称，实验证明具有与石墨烯相同的原子构成为蜂窝状晶格结构的层状MoS2是一种优异的谷电子学意义上的新型低耗电器件用半导体材料。为降低耗电量，此前的研究集中在自旋电子方面，即半导体器件不用电荷，而是利用电子自旋，但近年来谷电子学研究比较引人注目。这是利用电子的另一个自由度“谷”，即由半导体晶体结构的对称性产生的电子流动及流动方式在左旋和右旋具有不同的性质。通过抑制因半导体结晶缺陷及杂质导致的能量损失，使电子自旋高效运动，从而减少电子器件的电力消耗。

简介：使用扫描电镜观察和分析了滚压不锈钢钢管的成型模具的表面磨损特性和形貌，分析了粘着磨损的形成机理，研究并制备了电刷镀Ni—w（D）．MoS2复合镀层修复了已磨损的模具．结果表明，镀层明显改善了模具表面的抗粘着磨损性能，使模具的使用寿命明显提高，并取得了良好的经济效益．

简介：通过在H2中煅烧沉积在膨润土表面的MoS3,制备纳米MoS2/膨润土复合物。利用热重分析、X射线衍射、扫描电镜和透射电镜等对获得的复合物进行表征。结果表明：纳米MoS2微粒分布在膨润土表面并形成层状结构,层间距大约为0.64nm。获得的复合物具有优良的脱除甲基橙的性能,并受到复合物用量、甲基橙初始浓度、温度和pH值等操作条件的影响,但不受光源的影响。复合物脱除甲基橙属于吸附机理,符合准二级动力学模型。

简介：Thecounterelectrode(CE)prominenceindye-sensitizedsolarcells(DSSCs)isundisputedwithresearchgearedtowardsreplacementofPtwithviablesubstituteswithexceptionalconductivityandcatalyticactivity.Herein,wereportthereplaceableCEwithbetterperformancethanthatofPt-basedelectrode.ThechemistrybetweenthegrapheneoxideandicetemplatesleadstocellularformationofreducedgrapheneoxidethatachievesgreaterconductivitytotheCE.Thesimultaneousgrowthofactiveedge-orientedMoS2ontheCEthroughCVDpossesseshighreflectivity.HighreflectiveMoS2trendstoincreasetheelectroactivitybyabsorbingmorephotonsfromthesourcetodyemolecules.Thus,thesynergisticeffectoftwomaterialswasfoundtoshowcasebetterphotovoltaicperformanceof7.6%against7.3%fortraditionalplatinumCE.