Changesoftheaveragebrightnessandnon-uniformityofdarkoutputimages,andqualityofpicturescapturedundernaturallightingforthecolorCMOSdigitalimagesensorsirradiatedatdifferentelectrondoseshavebeenstudiedincomparisontothosefromtheγ-irradiatedsensors.Fortheelectron-irradiatedsensors,thenon-uniformityincreasesobviouslyandasmallbrightregiononthedarkimageappearsatthedoseof0.4kGy.Theaveragebrightnessincreasesat0.4kGy,increasessharplyat0.5kGy.Thepictureisveryblurryonlyat0.6kGy,showingthesensorundergoessevereperformancedegradation.ElectronradiationdamageismuchmoreseverethanγradiationdamagefortheCMOSimagesensors.Apossibleexplanationispresentedinthispaper.
