The influence of thermally assisted tunneling on the performance of charge trapping memory

(整期优先)网络出版时间:2012-07-17
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Weevaluatetheinfluenceofthethermallyassistedtunneling(TAT)mechanismonchargetrappingmemory(CTM)cellperformancebynumericalsimulation,andcomprehensivelyanalysetheeffectsofthetemperature,trapdepth,distributionoftrappedcharge,gatevoltageandparametersofTATonerasing/programmingspeedandretentionperformance.TATisanindispensablemechanisminCTMthatcanincreasethedetrappingprobabilityoftrappedcharge.OurresultsrevealthattheTATeffectcausesthesensitivityofcellperformancetotemperatureanditcouldaffecttheoperationalspeed,especiallyfortheerasingoperation.TheresultsshowthattheretentionperformancedegradescomparedwithwhentheTATmechanismisignored.