Weevaluatetheinfluenceofthethermallyassistedtunneling(TAT)mechanismonchargetrappingmemory(CTM)cellperformancebynumericalsimulation,andcomprehensivelyanalysetheeffectsofthetemperature,trapdepth,distributionoftrappedcharge,gatevoltageandparametersofTATonerasing/programmingspeedandretentionperformance.TATisanindispensablemechanisminCTMthatcanincreasethedetrappingprobabilityoftrappedcharge.OurresultsrevealthattheTATeffectcausesthesensitivityofcellperformancetotemperatureanditcouldaffecttheoperationalspeed,especiallyfortheerasingoperation.TheresultsshowthattheretentionperformancedegradescomparedwithwhentheTATmechanismisignored.