摘要
Anewmethodforfabricatingorderedporoussiliconisreported.Atwo-dimensionalsilicananospherearrayisusedasatemplatewithahydrofluoricacid-hydrogenperoxidesolutionforetchingthenanospheres.Theinitialdiameteranddistributionoftheholesintheresultingporoussiliconlayeraredeterminedbythesizeanddistributionofthesilicananospheres.Thecorrosiontimecanbeusedtocontrolthedepthsoftheholes.ItisfoundthatthepresenceofaSiO_2layer,formedbytheoxidationoftheroughinternalsurfaceofthehole,istheprimaryreasonallowingthecorrosiontoproceed.Ultravioletreflectionandthermalconductivitymeasurementsshowthatthediameteranddistributionoftheholeshaveagreatinfluenceonpropertiesoftheporoussilicon.
出版日期
2016年05月15日（中国期刊网平台首次上网日期，不代表论文的发表时间）
