首页 > 《电子科学学刊：英文版》 > 1990年2期 > FLUORINE BEHAVIOR IN BF2+ IMPLANTED POLYSILICON FILMS SUBJECTED TO RAPID THERMAL ANNEALING

FLUORINE BEHAVIOR IN BF2+ IMPLANTED POLYSILICON FILMS SUBJECTED TO RAPID THERMAL ANNEALING

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摘要 ThephysicalandelectricalpropertiesofBF2+implantedpolysiliconfilmssubjectedtorapidthermalannealing（RTA）arepresented.ItisfoundthattheoutdiffusionofFanditssegregationatpolysilicon/siliconoxideinterfaceduringRTAarethemajorcausesofFanomalousmigration.FluorinebubbleswereobservedinBF2+implantedsamplesatdosesof1×1015and5×1015cm-2afterRTA.

DOI pj0xko8wjy/1074703

作者林成鲁;倪如山;邹世昌

机构地区不详

出处《电子科学学刊：英文版》 1990年2期

关键词 Ion IMPLANTATION Rapid thermal ANNEALING FLUORINE

分类 [电子电信][物理电子学]

出版日期 1990年02月12日（中国期刊网平台首次上网日期，不代表论文的发表时间）

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来源期刊

电子科学学刊：英文版

电子科学学刊：英文版

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相关关键词

Ion IMPLANTATION Rapid thermal ANNEALING FLUORINE

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