简介:利用高频辅助激光熔覆技术在镍基合金上制备Al2O3-13%TiO2(质量分数)陶瓷涂层。采用SEM、XRD和EDS等方法分析陶瓷涂层的微观结构和陶瓷层与粘结层之间的结合界面。结果表明:陶瓷层出现了完全熔化区和液相烧结区双层结构,其中,完全熔化区颗粒充分烧结长大,而液相烧结区则出现了三维网状结构,该三维网状结构由熔化的TiO2相包裹Al2O3颗粒形成。通过激光熔覆作用下的粉末熔化和扁平化行为解释双层结构形成机理。同时,在陶瓷层与粘结层的结合界面上发现具有尖晶石结构的NiAl2O4和针状结构的Cr2O3,证明在激光熔覆过程中发生的化学反应可以有效增加陶瓷层与粘结层的结合强度。
简介:为提高硼的去除率,研究了电磁感应精炼过程中硼杂质在CaO-SiO2-BaO-CaF2四元渣和熔硅之间的分配系数LB,讨论了四元渣系中CaO/SiO2质量比、BaO和CaF2含量、熔炼时间对LB的影响规律。结果表明:随着CaO.SiO2渣中BaO和CaF2含量的增大,LB值增大。当CaO/SiO2质量比为1.1:1、BaO和CaF2含量分别为15%和20%时,CaO.SiO2.BaO.CaF2四元渣去除熔硅中硼杂质效果最好,LB达到最大值6.94,并且LB随着熔炼时间的延长而增大。经过两次造渣后,熔硅中硼含量由3.5×10.5降到3.7×10.6,硼的去除率达到89.4%。
简介:Inviewoftheimportanceofsolventextractionofrareearthmetalswiththeacidicorganophosphorousreagent,thedevelopmentofachemicallybasedmodelapplicabletohighconcentrationisdesired.Inthepresentstudy,theequilibriumdistributionofdysprosium(Ⅲ)betweenanaqueousnitricacidsolutionand2-ethylhexylphosphonicacidmono-2-ethylhexylester(PC88A)wasmeasuredintherangeofaninitialaqueousdysprosium(Ⅲ)concentrationfrom1.0×10-3to1.0×10-1kmol/m3andPC88Aconcentrationfrom0.16to0.65kmol/m3inShellsolD70asthediluent.Theobtaineddatawereanalyzedusingthechemicallybasedmodelinordertocorrelatetheequilibriumdistributionratios.Inthismodel,dysprosium(Ⅲ)wasassumedtobeextractedwiththePC88Adimerasa1:3complex,theactivitieswereconsideredfortheaqueousspecies,andtheeffectiveconcentrationofthePC88AdimerwascalculatedusingAlstad'sempiricalequation.Asaresult,theapparentextractionequilibriumconstantwasdeterminedtobe253(kmol·m-3)-2withanexcellentcorrelationbetweentheexperimentandcalculationresultsinthewiderangeofthelogarithmofthedistributionratiofrom-2to3.5.Inconclusion,themethodologyinthismodelwouldbeeffectiveforquantitativedescriptionofsolventextractionbehaviorofgeneralrareearthelementsaswellasdysprosium.
简介:采用扫描电镜、能谱仪以及X射线衍射仪对具有WC+β(β为钴基粘结相)两相结构的WC-11Co-0.71Cr3C2-0.06RE(RE为含La、Ce、Pr、Nd的混合稀土)硬质合金烧结体表面进行观察与分析。结果表明,在烧结过程中合金中的La、Ce、Pr、Nd通过定向迁移与烧结炉内气氛中的S、O等杂质元素结合,在合金烧结体表面形成RE2S3(主)和RE2O2S(少量)弥散相。从合金中Cr3C2的热力学稳定性、Cr在Co中的溶解度特性以及稀土原子激发等3个方面,对稀土迁移活性的激发机制和稀土原子的定向迁移机制进行分析与讨论。
简介:Byuseofmicro-DTAtechniqueaswellasambientandhightemperatureX-rayanalysisthephasediagramofNaCl-CaCl2hasbeenchecked.Itis.asimpleeutecticsystemwithasolidsolubilityinthesodiumchlorideside.Theeutecticpointisat773K,49mol%NaCl.Theexperimentalresults,especiallythoseoftheX-raydiffractionstudieshaveshowedthattheincongruentcompound4NaCl-CaCl2doesnotexistintheNaCl-CaCl2system.
简介:ThelongafterglowSrAl2O4:Dy,Euphosphorisliabletohydrolyzeinwaterwithdeteriorationoftheluminescentproperty.SrAl2O4:Dy,Euphosphorswerethereforeheatedat60-90℃inTEOSsoltoformasurfacegelandthenheat-treatedat400℃toobtainSiO2coatedphosphors.ObservationbyTransmissionElectronMicroscope(TEM)andX-rayphotoelectronspectroscopy(XPS)showsthatathinsilicafilmformsonthesurfaceofthephosphors.Thecoatingprocedurecanbeillustratedbyafour-stepprocessandthetransparentsilicafilmcansuppressthehydrolysisprocess,sothattheluminescentpropertiesofthephosphorsareunimpairedorevenbetter.
简介:InorganicbufferlayerssuchasSiO2orTiO2andtransparentconductiveindium-tin-oxide(ITO)filmswerepreparedonpolyethyleneterephthalate(PET)substratesbyionassisteddeposition(IAD)atroomtemperature,andtheeffectsofSiO2andTiO2onthebendingresistanceperformanceofflexibleITOfilmswereinvestigated.TheresultsshowthatITOfilmswithSiO2orTiO2bufferlayerhavebetterresistancestabilitiescomparedtooneswithoutthebufferlayerwhentheITOfilmsareinwardsbentatabendingradiusmorethan1.2cmandwhentheITOfilmsareoutwardsbentatabendingradiusfrom0.8cmto1.2cm.ITOfilmswithSiO2bufferlayerhavebetterresistancestabilitiescomparedtooneswithTiO2bufferlayeraftertheITOfilmsarebentseveralhundredsofcyclesatthesamebendingradius,fortheadhesionofSiO2isstrongerthanthatofTiO2.ThecompressivestressresultedfrominwardbendingleadstotheformationofmoredefectsintheITOfilmscomparedwiththetensilestressarisingfromoutwardbending.SiO2andTiO2bufferlayerscaneffectivelyimprovethecrystallinityofITOfilmsin(400),(440)directions.
简介:有5-8nm的尺寸的做Eu的GaOOHnanoparticles被热水的方法作为表面活化剂用钠dodecylbenzenesulfonate(SDBS)准备。做Eu的-Ga2O3和-Ga2O3被退火进一步制作GaOOH:Eu然后由X光检查衍射(XRD)描绘了,传播电子显微镜学(TEM)和光致发光(PL)。TEM结果显示出那monodisperse做Eu3+的GaOOHnanoparticles形式然后变换进通过退火的做Eu3+的-Ga2O3和-Ga2O3GaOOH:在600和900点的Eunanoparticles?????????????????@
简介:Inthiswork,asimpleandfacileone-potoleylaminesolvothermalsyntheticmethodwasdevelopedtosynthesizeCu_2ZnSnS_4(CZTS)nanocrystals.AndtheCu_2ZnSn(S,Se)_4(CZTSSe)thinfilmswerepreparedbyselenizingCZTSnanocrystals.TheobtainedCZTSnanocrystalsandCZTSSefilmswerestudiedusingX-raydiffraction(XRD),transmissionelectronmicroscopy(TEM),scanningelectronmicroscopy(SEM),energy-dispersiveX-rayspectroscopy(EDX),andultraviolet–visiblespectrophotometer(UV–Vis).TEMresultsshowthatthesphere–likeCZTSnanoparticleswithdiameterbetween12and35nmarepolydispersed.XRDstudiesindicatethatthepreparedCZTSnanocrystalsformkesteritecrystalstructure,andtheCZTSSefilmswithkesteritecrystalstructurearealsoobtainedattheannealingtemperaturesof500and550°C.Inparticularafterannealingat500°Cfor20min,theCZTSSefilmexhibitsasmooth,uniform,crack-free,andlarge-grainedtopographyandpossessesCu-poorandSn-richcomposition.Moreover,itshowsstrongopticalabsorptionfromvisibletonear-infrared(IR)region,anditsopticalbandgap(Eg)isfoundtobeabout1.44eV.