简介:Theeffectofpiezoelectricityonphononpropertiesandthermalconductivityofgalliumnitride(GaN)nanofilmsistheoreticallyinvestigated.TheelasticitymodelisutilizedtoderivethephononpropertiesinspatiallyconfinedGaNnanofilms.ThepiezoelectricconstitutiverelationinGaNnanofilmsistakenintoaccountincalculatingthephonondispersionrelation.Themodifiedphonongroupvelocityandphonondensityofstateaswellasthephononthermalconductivityarealsoobtainedduetothecontributionofpiezoelectricity.TheoreticalresultsshowthatthepiezoelectricityinGaNnanofilmscanchangesignificantlythephononpropertiessuchasthephonongroupvelocityanddensityofstates,resultinginthevariationofthephononthermalconductivityofGaNnanofilmsremarkably.Moreover,thepiezoelectricityofGaNcanmodifythedependenceofthermalconductivityonthegeometricalsizeandtemperature.TheseresultscanbeusefulinmodelingthethermalperformanceintheactiveregionofGaN-basedelectronicdevices.