简介：Developingalow-cost,room-temperatureoperatedandcomplementarymetal-oxide-semiconductor(CMOS)compatiblevisible-blindshort-wavelengthinfrared(SWIR)siliconphotodetectorisofinterestforsecurity,telecommunications,andenvironmentalsensing.Here,wepresentasilver-supersaturatedsilicon(Si:Ag)-basedphotodetectorthatexhibitsavisible-blindandhighlyenhancedsub-bandgapphotoresponse.Thevisible-blindresponseiscausedbythestrongsurface-recombination-inducedquenchingofchargecollectionforshort-wavelengthexcitation,andtheenhancedsub-bandgapresponseisattributedtothedeep-levelelectrontraps-inducedband-bendingandtwo-stagecarrierexcitation.TheresponsivityoftheSi:Agphotodetectorreaches504mA·W-1at1310nmand65mA·W-1at1550nmunder-3Vbias,whichstandsonthestageasthehighestlevelinthehyperdopedsilicondevicespreviouslyreported.Thehighperformanceandmechanismunderstandingclearlydemonstratethatthehyperdopedsiliconshowsgreatpotentialforuseinopticalinterconnectandpower-monitoringapplications.

简介：Bismuth(Bi)-dopedphotonicmaterials,whichexhibitbroadbandnear-infrared(NIR)luminescence(1000–1600nm),areevolvingintointerestinggainmedia.However,thetraditionalmethodshaveshowntheirlimitationsinenhancingBiNIRemission,especiallyinthemicroregion.Consequently,thetypicalNIRemissionhasseldombeenachievedinBi-dopedwaveguides,whichhighlyrestrictstheapplicationofBi-activatedmaterials.Here,superbroadbandBiNIRemissionisinducedinsituinstantlyinthegratingregionbyafemtosecond(fs)laserinsideborosilicateglasses.Aseriesofstructuralandspectroscopiccharacterizationsaresummonedtoprobethegenerationmechanism.AndweshowhowthisnovelNIRemissioninthegratingregioncanbeenhancedsignificantlyanderasedreversibly.Furthermore,wesuccessfullydemonstrateBi-activatedopticalwaveguides.TheseresultspresentnewinsightsintoBi-dopedmaterialsandpushthedevelopmentofbroadbandwaveguideamplification.