简介:Inthisstudy,weevaluatethevaluesoflatticethermalconductivityκLoftypeIIGeclathrate(Ge34)anddiamondphaseGecrystal(d-Ge)withtheequilibriummoleculardynamics(EMD)methodandtheSlack'sequation.ThekeyparametersoftheSlack'sequationarederivedfromthethermodynamicpropertiesobtainedfromthelatticedynamics(LD)calculations.TheempiricalTersoff'spotentialisusedinbothEMDandLDsimulations.Thethermalconductivitiesofd-Gecalculatedbybothmethodsareinaccordancewiththeexperimentalvalues.ThepredictionsoftheSlack'sequationareconsistentwiththeEMDresultsabove250KforbothGe34andd-Ge.Inatemperaturerangeof200-1000K,theκLvalueofd-GeisaboutseveraltimeslargerthanthatofGe34.
简介:TheultrafastdynamicprocessinsemiconductorGeirradiatedbythefemtosecondlaserpulsesisnumericallysimulatedonthebasisofvanDrielsystem.Itisfoundthatwiththeincreaseofdepth,thecarrierdensityandlatticetemperaturedecrease,whilethecarriertemperaturefirstincreasesandthendrops.ThelaserfluencehasagreatinfluenceontheultrafastdynamicalprocessinGe.Asthelaserfluenceremainsaconstantvalue,thoughtheoverallevolutionofthecarrierdensityandlatticetemperatureisalmostindependentofpulsedurationandlaserintensity,increasingthelaserintensitywillbemoreeffectivethanincreasingthepulsedurationinthegenerationofcarriers.IrradiatingtheGesamplebythefemtoseconddoublepulses,theultrafastdynamicalprocessofsemiconductorcanbeaffectedbythetemporalintervalbetweenthedoublepulses.
简介:GrazingincidentX-raydiffractionatdifferentgrazinganglesforself-organizedGedotsgrownonSi(001)arecarriedoutandlatticeconstantexpansionsof1.2?paralleltothesurfaceascomparedwiththeSilatticearefoundwithintheGedots.A3.1?latticeexpansionoftheGedotsalongthegrowthdirectionisalsofundbyordinaryX-ray(004)diffraction.AccordingtothePoissonequationandtheVegardlaw,ourresultsinferthattheGedotshouldbeapartiallystrainrelaxedSiGealloywithGecontentofabuot55?2001ElsevierScienceB.V.Allrightsreserved.
简介:ZnOfilmscontainingErandGenanocrystals(nc-Ge)weresynthesizedandtheirphotoluminescence(PL)propertieswerestudied.Visibleandnear-infraredPLintensitiesarefoundtobegreatlyincreasedinnc-Ge-containingfilm.Er-related1.54μmemissionhasbeeninvestigatedunderseveralexcitationconditionsupondifferentkindsofGe,ErcodopedZnOthinfilms.1.54μmPLenhancementaccompaniedbytheappearanceofnc-Geimpliesasignificantcorrelationbetweennc-GeandPLemissionofEr3+.Theincreasedintensityof1.54μminGe:Er:ZnOfilmisconsideredtocomefromthejointeffectofthelocalpotentialdistortionaroundEr3+andthepossibleenergytransferfromnc-GetoEr3+.
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简介:HeteroatomM-ZSM-12zeolites(M=B,Al,Ge,Ga,Fe)arehydrothermallysynthesizedanditisprovedthattheheteroatomMisinvolvedintheframeworkofsynthesizedmolecularsievesbymeansofXRD,IRspectra.TheresultsofadsorptionanddiffusionexperimentsindicatethattheheteroatomMmodifiestheporevolume,specificsurfacearea,andthechannelofZSM-12molecularsieves.
简介:Inthispaper,high-speedsurface-illuminatedGe-on-Sipinphotodiodeswithimprovedeffidencyaredemon-strated.Withphoton-trappingmicroholefeatures,theexternalquantumefficiency(EQE)oftheGe-on-Sipindiodeis〉80%at1300nmand73%at1550nmwithanintrinsicGelayerofonly2μmthickness,showingmuchimprovementcomparedtoonewithoutmicroholes.MorethanthreefoldEQEimprovementisalsoob-servedatlongerwavelengthsbeyond1550nm.Theseresultsmakethemicrohole-enabledGe-on-SiphotodiodespromisingtocoverboththeexistingCandLbands,aswellasanewdatatransmissionwindow(1620-1700nm),whichcanbeusedtoenhancethecapacityofconventionalstandardsingle-modefibercables.Thesephotodiodeshavepotentialformanyapplications,suchasinter-/intra-datacenters,passiveopticalnetworks,metroandlong-hauldensewavelengthdivisionmultiplexingsystems,eye-safelidarsystems,andquantumcommunications.TheCMOSandBiCMOSmonolithicintegrationcompatibilityofthisworkisalsoattractiveforGeCMOS,near-infraredsensing,andcommunicationintegration.
简介:WehavesynthesizedandinvestigatedphysicalpropertiesoftwonewquaternarycompoundsGd2CoAl4T2(T=Si,Ge)singlecrystals,whichareisostructuraltoTb2NiAl4Ge2andEr2CoAl4Ge2.Themostimportantstructuralfeatureofthesematerialsistheanti-CaF2-typeCoAl4T2slabs.Thesematerialsshowmetallicbehaviorbelow300Kandthereisalong-rangeantiferromagnetic(AFM)transitionappearingat20and27KforGdCoAl4Ge2andGd2CoAl4Si2,respectively.ResistivityandheatcapacitymeasurementsalsoconfirmthesebulkAFMtransitions.Furtheranalysisindicatesthatthislong-rangeantiferromagnetismshouldresultfromthemagneticinteractionbetweenlocalmomentsofGd^3+ions.
简介:做Si的Ge(2)sb(2)Te(5)电影被dc劈啪作响magnetronco与Ge2Sb2Te5和Si目标准备了。在在两结晶化温度和阶段转变温度fromface-centred-cubic(fcc)的增加的Te(5)电影结果分阶段执行到的Ge(2)sb(2)的Si的增加六角形(十六进制)阶段。Ge2Sb2Te5电影的抵抗力显示出重要增加,Si做。当在这部电影做Si的11.8at.%时,在退火的460度C以后的抵抗力与undopedGe2Sb2Te5电影相比从64~99终止从1~11m终止(.)厘米和动态抵抗增加增加。这对写阶段变化随机存取记忆的当前的减小很有用。
简介:一、财务控制与治理结构:部分与整体的关系现代理论认为,公司是由一系列利益相关者组成的一个契约联合体。这些利益相关者包括股东、债权人、经营者、职工、顾客、供应商、政府等等。而公司治理结构就是用来协调他们之间的利益关系,以保证公司决策的科学化,从而维护各方面利益的一整套正式或非正式的、内部或外部的制度。公司治理结构的功能是配置相关者的权、责、利,这个“权”指的是剩余控制权,即对法律或合同未作规定的资产使用方式作出决策的权利,它决定着剩余收益权,是公司治理的基础。而公司控制权的核心是财务控制权,因为公司财务是对生产经营活动的综合反映,是各方面利益的焦点所在。公司的
简介:为解决以往上市公司集成评价模型中各方法评价结果不一致问题,本文构建了改进集成评价模型。该模型先采用层次分析法、灰色关联度法、因子分析法进行评价,并运用KENDALL-W协和系数法对各评价结果进行事前一致性检验;通过检验后,再分别运用算术平均组合评价模型、Borda组合评价模型和Copeland组合评价模型进行组合评价。为了衡量组合评价与各评价方法的评价结果是否吻合,应用Spearman等级相关系数进行组合评价方法的事后检验,并根据Spearman等级相关系数的大小,选出最优的组合评价方法。最后,对中国26家上市运输公司财务绩效进行了集成评价的实证研究,并以算术平均组合评价模型的标准得分为聚类指标,采用欧氏距离法对26家上市运输公司进行聚类。结果显示:铁路、水路、公路运输各存在一个典型绩优企业,分别是:铁龙物流、北京传媒、海峡股份,四类上市运输公司中铁路上市公司财务绩效最优。