简介：Thisworkinvestigatesinternalplasmaprocessparametersusingahairpinresonanceprobeandopticalemissionspectroscopy.ThedependenceofelectrondensityandatomicfluorineonthepercentageofoxygeninanSF6/O2dischargewasmeasuredusingthesemethods.AnRIEOxfordInstruments80pluschamberwasusedfortheexperiments.Twodifferentprocesspowers(100Wand300W)ataconstantpressure(100mTorr)wereused,anditwasfoundthattheopticalemissionintensityofthe703.7nmand685.6nmlinesofatomicfluorineincreasedrapidlyasoxygenwasaddedtotheSF6discharge,reachedtheirmaximumatanO2fractionof20%andthendecreasedwithfurtheradditionofoxygen.TheplasmaelectrondensitywasalsostronglyinfluencedbytheadditionofO2.

简介：ThisworkinvestigatedC2F6/O2/ArplasmachemistryanditseffectontheetchingcharacteristicsofSiCOHlow-kdielectricsin60MHz/2MHzdual-frequencycapacitivelycoupleddischarge.FortheC2F6/Arplasma,theincreaseinthelow-frequency(LF)powerledtoanincreasedionimpact,promptingthedissociationofC2F6withhigherreactionenergy.Asaresult,fluorocarbonradicalswithahighF/Cratiodecreased.Theincreaseinthedischargepressureledtoadecreaseintheelectrontemperature,resultinginthedecreaseofC2F6dissociation.FortheC2F6/O2/Arplasma,theincreaseintheLFpowerpromptedthereactionbetweenO2andC2F6,resultingintheeliminationofCF3andCF2radicals,andtheproductionofanF-richplasmaenvironment.TheF-richplasmaimprovedtheetchingcharacteristicsofSiCOHlow-kfilms,leadingtoahighetchingrateandasmoothetchedsurface.