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  • 简介:Thispaperoptimizestheburiedchannelcharge-coupleddevice(BCCD)structurefabricatedbycomplementarymetaloxidesemiconductor(CMOS)technology.TheoptimizedBCCDhasadvantagesoflownoise,highintegrationandhighimagequality.Thechargetransferprocessshowsthatinterfacetraps,weakfringingfieldsandpotentialwellbetweenadjacentgatesallcausethedecreaseofchargetransferefficiency(CTE).CTEandwellcapacityaresimulatedwithdifferentoperatingvoltagesandgapsizes.CTEcanachieve99.999%andthewellcapacityreachesupto25000electronsforthegapsizeof130nmandthemaximumoperatingvoltageof3V.

  • 标签: CMOS工艺 优化设计 BCCD 互补金属氧化物半导体 电荷耦合装置 热膨胀系数