简介:Thispaperoptimizestheburiedchannelcharge-coupleddevice(BCCD)structurefabricatedbycomplementarymetaloxidesemiconductor(CMOS)technology.TheoptimizedBCCDhasadvantagesoflownoise,highintegrationandhighimagequality.Thechargetransferprocessshowsthatinterfacetraps,weakfringingfieldsandpotentialwellbetweenadjacentgatesallcausethedecreaseofchargetransferefficiency(CTE).CTEandwellcapacityaresimulatedwithdifferentoperatingvoltagesandgapsizes.CTEcanachieve99.999%andthewellcapacityreachesupto25000electronsforthegapsizeof130nmandthemaximumoperatingvoltageof3V.