摘要
InGaN-basedlight-emittingdiode(LED)asforthereplacementofconventionalfluorescentlightingsourcestillneedsagreatefforttoimprovethelight-extractingefficiencyaswellasinternalquantumefficiencyofLEDs.Surfaceplasmontechnologyhasrecentlyattractedconsiderableinterest,becausethespontaneousemissionrateandthelightextractionefficiencyofalight-emittingdevicecanbesimultaneouslyenhancedthroughthecouplingbetweenanInGaNquantumwellandsurfaceplasmons.Thesurfaceplasmon-emittercouplingtechniquewouldleadtohighbrightnessmultichipwhiteLEDsthatofferrealisticalternativestoconventionalfluorescentlightsources.Inthisarticle,thepossibleenhancementmechanismofsurfaceplasmonisdiscussed,andthenrecentdevelopmentsofsurface-plasmon-enhancedlight-emittingdiodeareintroduced.
出版日期
2010年02月12日（中国期刊网平台首次上网日期，不代表论文的发表时间）
