摘要
TheDCcharacteristicsofSiGeHBTirradiatedatdifferentelectrondosehavebeenstudiedinacomparisonwiththoseofSiBJT.Generally,IbandIb-Ib0increase,Ic,Ic-Ic0andits+/-transitionVbeaswellasDCcurrentgainβdecreaseswithincreasingdose;increaseofIb-Ib0withincreasingdoseforSiBJTismuchlargerthanthatforSiGeHBT;βincreaseswithVbeorIb,butdecreasesatIb＜0.25mAwithIb,andcongregatesathigherdose;andadamagefactord(β)ismuchlessatthesamedoseforSiGeHBTthanforSiBJT.SiGeHBThasmuchbetteranti-radiationperformancethanSiBJT.SomeanomalousphenomenaforincreaseofIc,Ic-Ic0,Ib-Ib0andβatlowdosehavebeenfound.Someelectrontrapshavebeenmeasured.Themechanismofchangesofcharacteristicsisdiscussed.
出版日期
2004年04月14日（中国期刊网平台首次上网日期，不代表论文的发表时间）
