Surface Morphology and Photoluminescence of 1.3μm Wavelength In（Ga） As／GaAs Quantum Dots-中国期刊网

摘要 Self-organizedIn0.5Ga0.5As/GaAsquantumislandstructureemittingat1.35μmatroomtemperaturehasbeensuccessfullyfabricatedbymolecularbeamepitaxy(MBE)viacycled(InAs)1/(GaAs)1monolayerdepositionmethod.Photoluminescence(PL)measurementshowsthatverynarrowPLlinewidthof19.2meVat300Khasbeenreachedforthefirsttime,indicatingeffectivesuppressionofinhomogeneousbroadeningofopticalemissionfromtheIn0.5Ga0.5Asislandsstructure.Ourresultsprovideimportantinformationforoptimizingtheepitaxialstructuresof1.3μmwavelengthquantumdot(QD)devices.

1JUN WANG;HAIYANG HU;HAWING YIN;YIMING BAI;JIAN LI;XIN WEI;YUANYUAN LIU;YONGQING HUANG;XIAOMIN REN;HUIYUN LIU. 1.3 μm InAs/GaAs quantum dot lasers on silicon with GalnP upper cladding layers.物理,2018-04.
2MENGYA LIAO;SIMING CHEN;ZHIXIN LIU;YI WANG;LALITHA PONNAMPALAM;ZICHUAN ZHOU;JIANG WU;MINGCHU TANG;SAMUEL SHUTTS;ZIZHUO LIU;PETER M.SMOWTON;SIYUAN YU;ALWYN SEEDS;HUIYUN LIU. Low-noise 1.3μm InAs/GaAs quantum dot laser monolithically grown on silicon.物理,2018-11.
3Kazuaki Sakoda;Takashi Kuroda;Naoki Ikeda;Takaaki Mano;Yoshimasa Sugimoto;Tetsuyuki Ochiai;Keiji Kuroda;Shunsuke Ohkouchi;Nobuyuki Koguchi;Kiyoshi Asakawa. Purcell effect of GaAs quantum dots by photonic crystal microcavities.光学工程,2009-10.
4金华;张立功;郑著宏;安立楠;吕有明;张吉英;范希武;申德振. Temperature-Dependent Photoluminescence in Coupling Structures of CdSe Quantum Dots and a ZnCdSe Quantum Well.物理,2005-06.
5李林;刘国军;李占国;李梅;王晓华. Extremely low density self-assembled InAs/GaAs quantum dots.光学工程,2008-06.
6Hui She;Biao Wang. Analysis of the Vertical and Lateral Interactions in a Multisheet Array of InAs/GaAs Quantum Dots.材料科学与工程,2009-05.
7Ju Wu Peng Jin. Self-assembly of InAs quantum dots on GaAs（O01） by molecular beam epitaxy.物理,2015-01.
8D. Bimberg;C. Meuer;M. Lammlin;S. Liebich;J. Kim;E. Varene;A. Kovsh;I. Krestnikov;G. Eisenstein. Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 μm： errata.光学工程,2009-03.
9LUOBn LUHongchang 等. All Optical Wavelength Conversion from 1.3μm to 1.55μm Using Two—segment DFB Lasers^①.物理电子学,1997-03.
10肖金龙;黄永箴;杜云;赵欢;倪海桥;牛智川. Gain Measurement and Anomalous Decrease of Peak Gain at Long Wavelength for InAs/GaAs Quantum-Dot Lasers.物理,2007-10.

Surface Morphology and Photoluminescence of 1.3μm Wavelength In（Ga） As／GaAs Quantum Dots

来源期刊

相关推荐

同分类资源更多

相关关键词

Surface Morphology and Photoluminescence of 1.3μm Wavelength In（Ga） As／GaAs Quantum Dots

来源期刊

相关推荐

同分类资源 更多

相关关键词

同分类资源更多