Effect of the Structure and Valence State on the Properties of VO2 Thin Films

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摘要 VO2thinfilmswithgoodswitchingpropertieswerepreparedbycontrollingtheannealingtimeandtheannealingtemperatureinavacuumsystem.Thestructural,opticalandelectricalpropertiesofthesampleswerecharacterizedbyusingXRD、XPS、UV-VISandelectricalmeasurements.TheswitchingparametersofVO2thinfilmwereinvestigatedtoo.TheresultsindicatethatbeforeandafterphasetransitiontheresistanceofVO2thinfilmschangesaboutthreeordersofmagnitude,thevariationoffilmtransmittanceof40%hasbeencarriedoutwiththeabsorptivityswitchingvelocityofabout0.2607/minat900nm.Thestructuralpropertyofsampleshasbeenimprovedbutthephase-transitionpropertieshavebeendecreasedbyincreasingtheannealingtimeandannealingtemperature.ThevalenceofVionsandthestructureofsampleshavegreateffectonphasetransitionpropertiesofVO2thinfilms.Discussionontheeffectsofannealingtimeandannealingtemperatureonthephase-transitiontemperatureandhysteresiswidthshowsthatthebestreasonableannealingtimeandannealingtemperaturecanbeachieved.
机构地区 不详
出版日期 2001年02月12日(中国期刊网平台首次上网日期,不代表论文的发表时间)
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