摘要
ThemicrostructureandopticalpropertiesofaburiedlayerformedbyO+(200keV,1.8×1018/cm2)andN+(180keV,4×1017/cm2)co-implantationandannealedat1200℃for2hhavebeeninvestigatedbyAugerelectron,IRabsorptionandreflectionspectroscopicmeasurements.TheresultsshowthattheburiedlayerconsistsofsilicondioxideandSiOx(x<2)andthenitrogensegregatestothewingsoftheburiedlayerwhereitformsanoxynitride.BydetailtheoreticalanalysisandcomputersimulationoftheIRreflectioninterferencespectrum,therefractiveindexprofilesoftheburiedlayerwereobtained.
出版日期
1992年01月11日(中国期刊网平台首次上网日期,不代表论文的发表时间)