OPTICAL EFFECTS AND MICROSTRUCTURE OF BURIED INSULATOR LAYER FORMED BY O~+ AND N~+ CO-IMPLANTATION

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摘要 ThemicrostructureandopticalpropertiesofaburiedlayerformedbyO+(200keV,1.8×1018/cm2)andN+(180keV,4×1017/cm2)co-implantationandannealedat1200℃for2hhavebeeninvestigatedbyAugerelectron,IRabsorptionandreflectionspectroscopicmeasurements.TheresultsshowthattheburiedlayerconsistsofsilicondioxideandSiOx(x<2)andthenitrogensegregatestothewingsoftheburiedlayerwhereitformsanoxynitride.BydetailtheoreticalanalysisandcomputersimulationoftheIRreflectioninterferencespectrum,therefractiveindexprofilesoftheburiedlayerwereobtained.
机构地区 不详
出版日期 1992年01月11日(中国期刊网平台首次上网日期,不代表论文的发表时间)
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