Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors-中国期刊网

摘要 AsimpleandeffectiveapproachtoimprovetheswitchingcharacteristicsofAlGaN/AlN/GaNheterostructurefieldeffecttransistors(HFETs)byapplyingavoltagebiasonthesubstrateispresented.Withtheincreaseofthesubstratebias,theOFF-statedraincurrentismuchreducedandtheON-statecurrentkeepsconstant.BoththeON/OFFcurrentratioandthesubthresholdswingaredemonstratedtobegreatlyimproved.Withthethinnedsubstrate,theimprovementoftheswitchingcharacteristicswiththesubstratebiasisfoundtobeevengreater.TheaboveimprovementsoftheswitchingcharacteristicsareattributedtotheinteractionbetweenthesubstratebiasinducedelectricalfieldandthebulktrapsintheGaNbufferlayer,whichreducestheconductivityoftheGaNbufferlayer.

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Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

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Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

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