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《中国科学院近代物理研究所和兰州重离子研究装置年报:英文版》
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2010年1期
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3 - 12 Precipitates and Defects in Silicon co-implanted with Helium and Oxygen
3 - 12 Precipitates and Defects in Silicon co-implanted with Helium and Oxygen
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摘要
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DOI
rj8ov927d0/1015410
作者
Li Bingsheng Zhang Chonghong Yang Yitao Zhang Liqing
机构地区
不详
出处
《中国科学院近代物理研究所和兰州重离子研究装置年报:英文版》
2010年1期
关键词
英文摘要
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期刊
分类
[理学][物理]
出版日期
2010年01月11日(中国期刊网平台首次上网日期,不代表论文的发表时间)
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来源期刊
中国科学院近代物理研究所和兰州重离子研究装置年报:英文版
2010年1期
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